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SI3475DV-T1-E3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 200V 950MA 6TSOP
Product Attributes：
Part Number: SI3475DV-T1-E3
Manufacturer: Vishay
Description: MOSFET P-CH 200V 950MA 6TSOP
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI3475DV-T1-E3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SI3475DV-T1-E3Mfr: Vishay SiliconixDescription: MOSFET P-CH 200V 950MA 6TSOPProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ObsoleteFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 200 VCurrent-ContinuousDrain(Id)@25°C: 950mA (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10VRdsOn(Max)@IdVgs: 1.61Ohm @ 900mA, 10VVgs(th)(Max)@Id: 4V @ 250µAGateCharge(Qg)(Max)@Vgs: 18 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 500 pF @ 50 VFETFeature: -PowerDissipation(Max): 2W (Ta), 3.2W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 6-TSOPSI3475DV-T1-E3 | Vishay | NHE Electronics
SI3475DV-T1-E3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
