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SI3812DV-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 20V 2A 6TSOP
Product Attributes：
Part Number: SI3812DV-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 20V 2A 6TSOP
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI3812DV-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SI3812DV-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 20V 2A 6TSOPProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: LITTLE FOOT®PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 2A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 2.5V, 4.5VRdsOn(Max)@IdVgs: 125mOhm @ 2.4A, 4.5VVgs(th)(Max)@Id: 600mV @ 250µA (Min)GateCharge(Qg)(Max)@Vgs: 4 nC @ 4.5 VVgs(Max): ±12VInputCapacitance(Ciss)(Max)@Vds: -FETFeature: Schottky Diode (Isolated)PowerDissipation(Max): 830mW (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 6-TSOPSI3812DV-T1-GE3 | Vishay | NHE Electronics
SI3812DV-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
