Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI4166DY-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 30.5A 8SO
Product Attributes:
Part Number: SI4166DY-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 30V 30.5A 8SO
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI4166DY-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
FIXED IND 33UH 130MA 3.4 OHM TH
DIODE GEN PURP 200V 30A TO247AC
DIODE ZENER 120V 1.25W DO214AC
FIXED IND 4.7UH 230MA 1.2 OHM TH
DIODE ZENER 10V 500MW DO219AC
Product Specifications:
MfrPart.: SI4166DY-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 30V 30.5A 8SOProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 30.5A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 3.9mOhm @ 15A, 10VVgs(th)(Max)@Id: 2.4V @ 250µAGateCharge(Qg)(Max)@Vgs: 65 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2730 pF @ 15 VFETFeature: -PowerDissipation(Max): 3W (Ta), 6.5W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 8-SOICSI4166DY-T1-GE3 | Vishay | NHE Electronics
SI4166DY-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.