Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI4427BDY-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 30V 9.7A 8SO
Product Attributes：
Part Number: SI4427BDY-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 30V 9.7A 8SO
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI4427BDY-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE ZENER 18V 200MW SOD323
ADJ PWR RES 150 OHM 280W CHAS MT
POT WW TRIMMER TERMINAL PINS
TVS DIODE 175VWM 344VC DO204AC
DIODE GEN PURP 100V 3A DO214AB
DIODE ZENER 6.8V 500MW DO220AA
Product Specifications：
MfrPart.: SI4427BDY-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 30V 9.7A 8SOProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 9.7A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 10.5mOhm @ 12.6A, 10VVgs(th)(Max)@Id: 1.4V @ 250µAGateCharge(Qg)(Max)@Vgs: 70 nC @ 4.5 VVgs(Max): ±12VInputCapacitance(Ciss)(Max)@Vds: -FETFeature: -PowerDissipation(Max): 1.5W (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 8-SOICSI4427BDY-T1-GE3 | Vishay | NHE Electronics
SI4427BDY-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
