Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI4434ADY-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 250V 2.8A/4.1A 8SO
Product Attributes：
Part Number: SI4434ADY-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 250V 2.8A/4.1A 8SO
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI4434ADY-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
SFERNICE POTENTIOMETERS & TRIMME
DIODE GEN PURP 1KV 1A DO204AL
DIODE SCHOTTKY 30V 10A TO263AB
TVS DIODE 17VWM 30.5VC DO214AA
FIXED IND 150NH 2.45A 30 MOHM TH
TVS DIODE 31.6VWM 56.4VC DO214AB
Product Specifications：
MfrPart.: SI4434ADY-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 250V 2.8A/4.1A 8SOProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: ThunderFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 250 VCurrent-ContinuousDrain(Id)@25°C: 2.8A (Ta), 4.1A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 7.5V, 10VRdsOn(Max)@IdVgs: 150mOhm @ 2.8A, 10VVgs(th)(Max)@Id: 4V @ 250µAGateCharge(Qg)(Max)@Vgs: 16.5 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 600 pF @ 125 VFETFeature: -PowerDissipation(Max): 2.9W (Ta), 6W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 8-SOSI4434ADY-T1-GE3 | Vishay | NHE Electronics
SI4434ADY-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
