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SI4463BDY-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 20V 9.8A 8SO
Product Attributes：
Part Number: SI4463BDY-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 20V 9.8A 8SO
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI4463BDY-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SI4463BDY-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 20V 9.8A 8SOProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 9.8A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 2.5V, 10VRdsOn(Max)@IdVgs: 11mOhm @ 13.7A, 10VVgs(th)(Max)@Id: 1.4V @ 250µAGateCharge(Qg)(Max)@Vgs: 56 nC @ 4.5 VVgs(Max): ±12VInputCapacitance(Ciss)(Max)@Vds: -FETFeature: -PowerDissipation(Max): 1.5W (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 8-SOICSI4463BDY-T1-GE3 | Vishay | NHE Electronics
SI4463BDY-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
