Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI4463CDY-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 20V 13.6A/49A 8SO
Product Attributes：
Part Number: SI4463CDY-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 20V 13.6A/49A 8SO
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI4463CDY-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE GEN PURP 400V 1.5A DO204AC
TVS DIODE 15VWM 26.9VC DO215AA
DIODE SCHOTTKY 60V 1.1A DO204AL
FIXED IND 3.3MH 400MA 2.53OHM TH
SCR CC 2SCR 1600V 40A ADD-A-PAK
IC SWITCH DUAL SPDT 16SOIC
Product Specifications：
MfrPart.: SI4463CDY-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 20V 13.6A/49A 8SOProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 13.6A (Ta), 49A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 2.5V, 10VRdsOn(Max)@IdVgs: 8mOhm @ 13A, 10VVgs(th)(Max)@Id: 1.4V @ 250µAGateCharge(Qg)(Max)@Vgs: 162 nC @ 10 VVgs(Max): ±12VInputCapacitance(Ciss)(Max)@Vds: 4250 pF @ 15 VFETFeature: -PowerDissipation(Max): 2.7W (Ta), 5W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 8-SOICSI4463CDY-T1-GE3 | Vishay | NHE Electronics
SI4463CDY-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
