Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI5473DC-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 12V 5.9A 1206-8
Product Attributes:
Part Number: SI5473DC-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 12V 5.9A 1206-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI5473DC-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 28VWM 45.4VC DO214AB
DIODE ARRAY GP 400V 8A D2PAK
FIXED IND 2.2UH 6.1A 12 MOHM SMD
DIODE SCHOTTKY 60V 1A DO213AB
FIXED IND 1MH 28MA 72 OHM TH
TVS DIODE 102VWM 165VC SMC
Product Specifications:
MfrPart.: SI5473DC-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 12V 5.9A 1206-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: TrenchFET®PartStatus: ObsoleteFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 12 VCurrent-ContinuousDrain(Id)@25°C: 5.9A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5VRdsOn(Max)@IdVgs: 27mOhm @ 5.9A, 4.5VVgs(th)(Max)@Id: 1V @ 250µAGateCharge(Qg)(Max)@Vgs: 32 nC @ 4.5 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: -FETFeature: -PowerDissipation(Max): 1.3W (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 1206-8 ChipFET™SI5473DC-T1-GE3 | Vishay | NHE Electronics
SI5473DC-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.