Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI5858DU-T1-E3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 20V 6A PPAK CHIPFET
Product Attributes:
Part Number: SI5858DU-T1-E3
Manufacturer: Vishay
Description: MOSFET N-CH 20V 6A PPAK CHIPFET
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI5858DU-T1-E3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
MODULE THYRISTOR 27A ADD-A-PAK
FIXED IND 5.6UH 185MA 1.8 OHM TH
SCR DBL HISCR 800V 105A ADDAPAK
TVS DIODE 36VWM 58.1VC DO214AA
IC SWITCH DUAL SPST 8MSOP
MOSFET P-CH 30V 5A SOT23-3
Product Specifications:
MfrPart.: SI5858DU-T1-E3Mfr: Vishay SiliconixDescription: MOSFET N-CH 20V 6A PPAK CHIPFETProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: LITTLE FOOT®PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 6A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5VRdsOn(Max)@IdVgs: 39mOhm @ 4.4A, 4.5VVgs(th)(Max)@Id: 1V @ 250µAGateCharge(Qg)(Max)@Vgs: 16 nC @ 8 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: 520 pF @ 10 VFETFeature: Schottky Diode (Isolated)PowerDissipation(Max): 2.3W (Ta), 8.3W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® ChipFET™ SingleSI5858DU-T1-E3 | Vishay | NHE Electronics
SI5858DU-T1-E3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.