Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI7102DN-T1-E3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 12V 35A PPAK 1212-8
Product Attributes:
Part Number: SI7102DN-T1-E3
Manufacturer: Vishay
Description: MOSFET N-CH 12V 35A PPAK 1212-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI7102DN-T1-E3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
FIXED IND 220UH 1.6A 162 MOHM TH
DIODE ARRAY SCHOTTKY 200V TO263
DIODE SCHOTTKY 35V 6A TO-220
TVS DIODE 6.4VWM 11.3VC DO214AA
Product Specifications:
MfrPart.: SI7102DN-T1-E3Mfr: Vishay SiliconixDescription: MOSFET N-CH 12V 35A PPAK 1212-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 12 VCurrent-ContinuousDrain(Id)@25°C: 35A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 2.5V, 4.5VRdsOn(Max)@IdVgs: 3.8mOhm @ 15A, 4.5VVgs(th)(Max)@Id: 1V @ 250µAGateCharge(Qg)(Max)@Vgs: 110 nC @ 8 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: 3720 pF @ 6 VFETFeature: -PowerDissipation(Max): 3.8W (Ta), 52W (Tc)OperatingTemperature: -50°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SI7102DN-T1-E3 | Vishay | NHE Electronics
SI7102DN-T1-E3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.