Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI7107DN-T1-E3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 20V 9.8A PPAK1212-8
Product Attributes:
Part Number: SI7107DN-T1-E3
Manufacturer: Vishay
Description: MOSFET P-CH 20V 9.8A PPAK1212-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI7107DN-T1-E3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 342VWM 548VC 1.5KE
MOSFET N-CH 600V 1.4A DPAK
FIXED IND 39UH 105MA 5.9 OHM SMD
DIODE GEN PURP 1.2KV 10A TO220AC
DIODE ZENER 2.7V 500MW DO35
OPTOISO 4KV TRANS W/BASE 8SOIC
Product Specifications:
MfrPart.: SI7107DN-T1-E3Mfr: Vishay SiliconixDescription: MOSFET P-CH 20V 9.8A PPAK1212-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ObsoleteFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 9.8A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5VRdsOn(Max)@IdVgs: 10.8mOhm @ 15.3A, 4.5VVgs(th)(Max)@Id: 1V @ 450µAGateCharge(Qg)(Max)@Vgs: 44 nC @ 4.5 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: -FETFeature: -PowerDissipation(Max): 1.5W (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SI7107DN-T1-E3 | Vishay | NHE Electronics
SI7107DN-T1-E3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.