Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI7718DN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 35A PPAK1212-8
Product Attributes：
Part Number: SI7718DN-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 30V 35A PPAK1212-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI7718DN-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
SFERNICE POTENTIOMETERS & TRIMME
FIXED IND 1MH 78MA 16.5 OHM TH
TVS DIODE 85.5VWM 137VC DO214AB
THERM NTC 10KOHM 3435K RING LUG
TVS DIODE 21.8VWM 39.1VC DO220AA
Product Specifications：
MfrPart.: SI7718DN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 30V 35A PPAK1212-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 35A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 6mOhm @ 10A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 45 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 1600 pF @ 15 VFETFeature: -PowerDissipation(Max): 3.7W (Ta), 52W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SI7718DN-T1-GE3 | Vishay | NHE Electronics
SI7718DN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
