Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI7788DP-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 50A PPAK SO-8
Product Attributes:
Part Number: SI7788DP-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 30V 50A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI7788DP-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
FIXED IND 1.2UH 590MA 180MOHM TH
DIODE GEN PURP 1.2KV 8A D-PAK
FIXED IND 3.3UH 300MA 2 OHM TH
TVS DIODE 10VWM 14.1VC 1.5KE
TVS DIODE 13VWM 21.5VC DO214AC
TVS DIODE 10VWM 17VC DO215AA
Product Specifications:
MfrPart.: SI7788DP-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 30V 50A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 50A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 3.1mOhm @ 15A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 125 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 5370 pF @ 15 VFETFeature: -PowerDissipation(Max): 5.2W (Ta), 69W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SI7788DP-T1-GE3 | Vishay | NHE Electronics
SI7788DP-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.