Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI7850DP-T1-E3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 60V 6.2A PPAK SO-8
Product Attributes：
Part Number: SI7850DP-T1-E3
Manufacturer: Vishay
Description: MOSFET N-CH 60V 6.2A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI7850DP-T1-E3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE GEN PURP 1KV 1.5A DO204
DIODE GEN PURP 1.6KV 40A TO247AC
IC ANALOG SWITCH SPDT SC70-6
FIXED IND 180NH 2.9A 30 MOHM TH
TVS DIODE 5VWM 11VC SOT23
DIODE ZENER 24V 1W DO214AC
Product Specifications：
MfrPart.: SI7850DP-T1-E3Mfr: Vishay SiliconixDescription: MOSFET N-CH 60V 6.2A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 6.2A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 22mOhm @ 10.3A, 10VVgs(th)(Max)@Id: 3V @ 250µAGateCharge(Qg)(Max)@Vgs: 27 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: -FETFeature: -PowerDissipation(Max): 1.8W (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SI7850DP-T1-E3 | Vishay | NHE Electronics
SI7850DP-T1-E3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
