Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI7900AEDN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays, MOSFET 2N-CH 20V 6A PPAK 1212-8
Product Attributes:
Part Number: SI7900AEDN-T1-GE3
Manufacturer: Vishay
Description: MOSFET 2N-CH 20V 6A PPAK 1212-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
SI7900AEDN-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE ZENER 3.6V 500MW DO35
THERMISTOR NTC 33KOHM 3964K 0805
MOSFET N-CH 30V 1.7A SOT363 SC70
TVS DIODE 13VWM 23.8VC DO214AC
Product Specifications:
MfrPart.: SI7900AEDN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET 2N-CH 20V 6A PPAK 1212-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - ArraysPackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: 2 N-Channel (Dual) Common DrainFETFeature: Logic Level GateDraintoSourceVoltage(Vdss): 20VCurrent-ContinuousDrain(Id)@25°C: 6ARdsOn(Max)@IdVgs: 26mOhm @ 8.5A, 4.5VVgs(th)(Max)@Id: 900mV @ 250µAGateCharge(Qg)(Max)@Vgs: 16nC @ 4.5VInputCapacitance(Ciss)(Max)@Vds: -Power-Max: 1.5WOperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountPackage/Case: PowerPAK® 1212-8 DualSI7900AEDN-T1-GE3 | Vishay | NHE Electronics
SI7900AEDN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.