Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI8808DB-T2-E1, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 4MICROFOOT
Product Attributes：
Part Number: SI8808DB-T2-E1
Manufacturer: Vishay
Description: MOSFET N-CH 30V 4MICROFOOT
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI8808DB-T2-E1 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
IC GATE DRVR HALF-BRIDG MLP33-10
FIXED IND 100UH 325MA 3.12OHM TH
DIODE GEN PURP 600V 1A DO220AA
DIODE ZENER 68V 225MW SOT23-3
THERMISTOR PTC 4.7K OHM 5% 0805
MOSFET N-CH 30V 60A 10POLARPAK
Product Specifications：
MfrPart.: SI8808DB-T2-E1Mfr: Vishay SiliconixDescription: MOSFET N-CH 30V 4MICROFOOTProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 1.8A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 1.5V, 4.5VRdsOn(Max)@IdVgs: 95mOhm @ 1A, 4.5VVgs(th)(Max)@Id: 900mV @ 250µAGateCharge(Qg)(Max)@Vgs: 10 nC @ 8 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: 330 pF @ 15 VFETFeature: -PowerDissipation(Max): 500mW (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 4-MicrofootSI8808DB-T2-E1 | Vishay | NHE Electronics
SI8808DB-T2-E1 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
