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SI8900EDB-T2-E1, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays, MOSFET 2N-CH 20V 5.4A 10-MFP
SI8900EDB-T2-E1 Images
SI8900EDB-T2-E1 Images
Product Attributes:
  • Part Number: SI8900EDB-T2-E1
  • Manufacturer: Vishay
  • Description: MOSFET 2N-CH 20V 5.4A 10-MFP
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
  • SI8900EDB-T2-E1 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications:
  • MfrPart.: SI8900EDB-T2-E1
  • Mfr: Vishay Siliconix
  • Description: MOSFET 2N-CH 20V 5.4A 10-MFP
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
  • Package: Tape & Reel (TR)
  • Series: TrenchFET®
  • PartStatus: Active
  • FETType: 2 N-Channel (Dual) Common Drain
  • FETFeature: Logic Level Gate
  • DraintoSourceVoltage(Vdss): 20V
  • Current-ContinuousDrain(Id)@25°C: 5.4A
  • RdsOn(Max)@IdVgs: -
  • Vgs(th)(Max)@Id: 1V @ 1.1mA
  • GateCharge(Qg)(Max)@Vgs: -
  • InputCapacitance(Ciss)(Max)@Vds: -
  • Power-Max: 1W
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • Package/Case: 10-UFBGA, CSPBGA
  • SI8900EDB-T2-E1 | Vishay | NHE Electronics
  • SI8900EDB-T2-E1 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
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