Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIA106DJ-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 60V 10A/12A PPAK
Product Attributes：
Part Number: SIA106DJ-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 60V 10A/12A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIA106DJ-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 51VWM 82.4VC DO219AB
FIXED IND 68UH 185MA 2.9 OHM TH
LED MODULE WARM WHITE, 24 LEDS
TVS DIODE 20VWM 35.8VC DO214AC
Product Specifications：
MfrPart.: SIA106DJ-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 60V 10A/12A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 10A (Ta), 12A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 7.5V, 10VRdsOn(Max)@IdVgs: 18.5mOhm @ 4A, 10VVgs(th)(Max)@Id: 4V @ 250µAGateCharge(Qg)(Max)@Vgs: 13.5 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 540 pF @ 30 VFETFeature: -PowerDissipation(Max): 3.5W (Ta), 19W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SC-70-6 SingleSIA106DJ-T1-GE3 | Vishay | NHE Electronics
SIA106DJ-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
