Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIA411DJ-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 20V 12A PPAK SC70-6
Product Attributes：
Part Number: SIA411DJ-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 20V 12A PPAK SC70-6
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIA411DJ-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE AVALANCHE 200V 4A SOD64
THERMISTOR PTC 2.7K OHM 1% 0805
TVS DIODE 48VWM 77.4VC DO214AC
FIXED IND 8.2UH 5.3A 32 MOHM SMD
MOSFET N-CH 500V 16A TO247AC
DIODE ZENER 3.9V 500MW SOD123
Product Specifications：
MfrPart.: SIA411DJ-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 20V 12A PPAK SC70-6Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ObsoleteFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 12A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 1.5V, 4.5VRdsOn(Max)@IdVgs: 30mOhm @ 5.9A, 4.5VVgs(th)(Max)@Id: 1V @ 250µAGateCharge(Qg)(Max)@Vgs: 38 nC @ 8 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: 1200 pF @ 10 VFETFeature: -PowerDissipation(Max): 3.5W (Ta), 19W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SC-70-6SIA411DJ-T1-GE3 | Vishay | NHE Electronics
SIA411DJ-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
