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SIA477EDJT-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 12V 12A PPAK SC70-6
Product Attributes：
Part Number: SIA477EDJT-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 12V 12A PPAK SC70-6
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIA477EDJT-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SIA477EDJT-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 12V 12A PPAK SC70-6Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IIIPartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 12 VCurrent-ContinuousDrain(Id)@25°C: 12A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5VRdsOn(Max)@IdVgs: 13mOhm @ 5A, 4.5VVgs(th)(Max)@Id: 1V @ 250µAGateCharge(Qg)(Max)@Vgs: 50 nC @ 4.5 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: 3050 pF @ 6 VFETFeature: -PowerDissipation(Max): 19W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SC-70-6 SingleSIA477EDJT-T1-GE3 | Vishay | NHE Electronics
SIA477EDJT-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
