Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIA483DJ-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 30V 12A PPAK SC70-6
Product Attributes：
Part Number: SIA483DJ-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 30V 12A PPAK SC70-6
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIA483DJ-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
MOSFET N-CH 200V 57A TO220AB
SFERNICE POTENTIOMETERS & TRIMME
FIXED IND 330UH 96MA 7.54OHM SMD
SFERNICE POTENTIOMETERS & TRIMME
TVS DIODE 22VWM 35.5VC DO214AA
FIXED IND 5.6UH 5.3A 45.6MOHM SM
Product Specifications：
MfrPart.: SIA483DJ-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 30V 12A PPAK SC70-6Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 12A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 21mOhm @ 5A, 10VVgs(th)(Max)@Id: 2.2V @ 250µAGateCharge(Qg)(Max)@Vgs: 45 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 1550 pF @ 15 VFETFeature: -PowerDissipation(Max): 3.5W (Ta), 19W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SC-70-6SIA483DJ-T1-GE3 | Vishay | NHE Electronics
SIA483DJ-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
