Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIA817EDJ-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 30V 4.5A PPAK SC70-6
Product Attributes：
Part Number: SIA817EDJ-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 30V 4.5A PPAK SC70-6
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIA817EDJ-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE ZENER 2.4V 500MW SOD80
FRED PT RECTIFIER AEC-Q101 SMP
FIXED IND 120NH 584MA 220MOHM SM
TVS DIODE 47.8VWM 77VC SMC
TVS DIODE 18VWM 29.2VC P600
TVS DIODE 100VWM 162VC DO214AB
Product Specifications：
MfrPart.: SIA817EDJ-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 30V 4.5A PPAK SC70-6Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: LITTLE FOOT®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 4.5A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 2.5V, 10VRdsOn(Max)@IdVgs: 65mOhm @ 3A, 10VVgs(th)(Max)@Id: 1.3V @ 250µAGateCharge(Qg)(Max)@Vgs: 23 nC @ 10 VVgs(Max): ±12VInputCapacitance(Ciss)(Max)@Vds: 600 pF @ 15 VFETFeature: Schottky Diode (Isolated)PowerDissipation(Max): 1.9W (Ta), 6.5W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SC-70-6 DualSIA817EDJ-T1-GE3 | Vishay | NHE Electronics
SIA817EDJ-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
