Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIE820DF-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 20V 50A 10POLARPAK
Product Attributes:
Part Number: SIE820DF-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 20V 50A 10POLARPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIE820DF-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE ARRAY SCHOTTKY 150V TO247
TVS DIODE 33VWM 59VC DO215AB
MOSFET 2N-CH 40V 6.6A 8-SOIC
SFERNICE POTENTIOMETERS & TRIMME
TVS DIODE 33.3VWM 53.9VC DO204AC
FIXED IND 820UH 80MA 13 OHM TH
Product Specifications:
MfrPart.: SIE820DF-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 20V 50A 10POLARPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 50A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 2.5V, 4.5VRdsOn(Max)@IdVgs: 3.5mOhm @ 18A, 4.5VVgs(th)(Max)@Id: 2V @ 250µAGateCharge(Qg)(Max)@Vgs: 143 nC @ 10 VVgs(Max): ±12VInputCapacitance(Ciss)(Max)@Vds: 4300 pF @ 10 VFETFeature: -PowerDissipation(Max): 5.2W (Ta), 104W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 10-PolarPAK® (S)SIE820DF-T1-GE3 | Vishay | NHE Electronics
SIE820DF-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.