Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIHB33N60ET5-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 600V 33A TO263
Product Attributes：
Part Number: SIHB33N60ET5-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 600V 33A TO263
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIHB33N60ET5-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE GEN PURP 200V 1A DO213AB
DIODE ZENER 3.9V 500MW SOD80
DIODE GEN PURP 200V 70A DO203AB
SFERNICE POTENTIOMETERS & TRIMME
DIODE ZENER 10V 1.25W DO214AC
DIODE GEN PURP 1.3KV 1A DO204AC
Product Specifications：
MfrPart.: SIHB33N60ET5-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 600V 33A TO263Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: EPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 600 VCurrent-ContinuousDrain(Id)@25°C: 33A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 99mOhm @ 16.5A, 10VVgs(th)(Max)@Id: 4V @ 250µAGateCharge(Qg)(Max)@Vgs: 150 nC @ 10 VVgs(Max): ±30VInputCapacitance(Ciss)(Max)@Vds: 3508 pF @ 100 VFETFeature: -PowerDissipation(Max): 278W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: D²PAK (TO-263)SIHB33N60ET5-GE3 | Vishay | NHE Electronics
SIHB33N60ET5-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
