Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIHD12N50E-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 550V 10.5A DPAK
Product Attributes:
Part Number: SIHD12N50E-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 550V 10.5A DPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIHD12N50E-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 43.6VWM 70.1VC 1.5KE
TVS DIODE 5VWM 9.2VC DO215AB
DIODE ARRAY SCHOTTKY 20V TO220AB
SCR MOD PWR 1200V 200A MAGNAPAK
DIODE AVALANCH 1KV 2.4A TO277A
Product Specifications:
MfrPart.: SIHD12N50E-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 550V 10.5A DPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: TubeSeries: EPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 550 VCurrent-ContinuousDrain(Id)@25°C: 10.5A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 380mOhm @ 6A, 10VVgs(th)(Max)@Id: 4V @ 250µAGateCharge(Qg)(Max)@Vgs: 50 nC @ 10 VVgs(Max): ±30VInputCapacitance(Ciss)(Max)@Vds: 886 pF @ 100 VFETFeature: -PowerDissipation(Max): 114W (Tc)OperatingTemperature: -55°C ~ 150°C (TA)MountingType: Surface MountSupplierDevicePackage: D-PAK (TO-252AA)SIHD12N50E-GE3 | Vishay | NHE Electronics
SIHD12N50E-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.