Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIHH070N60EF-T1GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 600V 36A PPAK 8 X 8
SIHH070N60EF-T1GE3 Images
Product Attributes：
Part Number: SIHH070N60EF-T1GE3
Manufacturer: Vishay
Description: MOSFET N-CH 600V 36A PPAK 8 X 8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIHH070N60EF-T1GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
SENSOR REMOTE REC 56.0KHZ 35M
SENSOR REMOTE REC 56.0KHZ 40M
DIODE ZENER 8.2V 500MW MICROMELF
BRIDGE RECT 1P 200V 12A GBPC-W
DIODE GPP 5A 1000V DO-214AB
SFERNICE POTENTIOMETERS & TRIMME
Product Specifications：
MfrPart.: SIHH070N60EF-T1GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 600V 36A PPAK 8 X 8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: EFPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 600 VCurrent-ContinuousDrain(Id)@25°C: 36A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 71mOhm @ 15A, 10VVgs(th)(Max)@Id: 5V @ 250µAGateCharge(Qg)(Max)@Vgs: 75 nC @ 10 VVgs(Max): ±30VInputCapacitance(Ciss)(Max)@Vds: 2647 pF @ 100 VFETFeature: -PowerDissipation(Max): 202W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 8 x 8SIHH070N60EF-T1GE3 | Vishay | NHE Electronics
SIHH070N60EF-T1GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
