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SIHH125N60EF-T1GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 600V 23A PPAK 8 X 8
SIHH125N60EF-T1GE3 Images
Product Attributes:
Part Number: SIHH125N60EF-T1GE3
Manufacturer: Vishay
Description: MOSFET N-CH 600V 23A PPAK 8 X 8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIHH125N60EF-T1GE3 Datasheet (PDF)
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Product Specifications:
MfrPart.: SIHH125N60EF-T1GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 600V 23A PPAK 8 X 8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: EFPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 600 VCurrent-ContinuousDrain(Id)@25°C: 23A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 125mOhm @ 12A, 10VVgs(th)(Max)@Id: 5V @ 250µAGateCharge(Qg)(Max)@Vgs: 47 nC @ 10 VVgs(Max): ±30VInputCapacitance(Ciss)(Max)@Vds: 1533 pF @ 100 VFETFeature: -PowerDissipation(Max): 156W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 8 x 8SIHH125N60EF-T1GE3 | Vishay | NHE Electronics
SIHH125N60EF-T1GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.