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SIR112DP-T1-RE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 40V 37.6A/133A PPAK
Product Attributes：
Part Number: SIR112DP-T1-RE3
Manufacturer: Vishay
Description: MOSFET N-CH 40V 37.6A/133A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIR112DP-T1-RE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SIR112DP-T1-RE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 40V 37.6A/133A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 40 VCurrent-ContinuousDrain(Id)@25°C: 37.6A (Ta), 133A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 1.96mOhm @ 10A, 10VVgs(th)(Max)@Id: 2.4V @ 250µAGateCharge(Qg)(Max)@Vgs: 89 nC @ 10 VVgs(Max): +20V, -16VInputCapacitance(Ciss)(Max)@Vds: 4270 pF @ 20 VFETFeature: -PowerDissipation(Max): 5W (Ta), 62.5W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SIR112DP-T1-RE3 | Vishay | NHE Electronics
SIR112DP-T1-RE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
