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    SIR510DP-T1-RE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, N-CHANNEL 100 V (D-S) MOSFET POW
    SIR510DP-T1-RE3 Images
    SIR510DP-T1-RE3 Images
    Product Attributes：
  • Part Number: SIR510DP-T1-RE3
  • Manufacturer: Vishay
  • Description: N-CHANNEL 100 V (D-S) MOSFET POW
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • SIR510DP-T1-RE3 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: SIR510DP-T1-RE3
  • Mfr: Vishay Siliconix
  • Description: N-CHANNEL 100 V (D-S) MOSFET POW
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: TrenchFET® Gen V
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 100 V
  • Current-ContinuousDrain(Id)@25°C: 31A (Ta), 126A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 7.5V, 10V
  • RdsOn(Max)@IdVgs: 3.6mOhm @ 20A, 10V
  • Vgs(th)(Max)@Id: 4V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 81 nC @ 10 V
  • Vgs(Max): ±20V
  • InputCapacitance(Ciss)(Max)@Vds: 4980 pF @ 50 V
  • FETFeature: -
  • PowerDissipation(Max): 6.25W (Ta), 104W (Tc)
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: PowerPAK® SO-8
  • SIR510DP-T1-RE3 | Vishay | NHE Electronics
    • SIR510DP-T1-RE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
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