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SIR570DP-T1-RE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, N-CHANNEL 150 V (D-S) MOSFET POW
Product Attributes:
Part Number: SIR570DP-T1-RE3
Manufacturer: Vishay
Description: N-CHANNEL 150 V (D-S) MOSFET POW
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIR570DP-T1-RE3 Datasheet (PDF)
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Product Specifications:
MfrPart.: SIR570DP-T1-RE3Mfr: Vishay SiliconixDescription: N-CHANNEL 150 V (D-S) MOSFET POWProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen VPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 150 VCurrent-ContinuousDrain(Id)@25°C: 19A (Ta), 77.4A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 7.5V, 10VRdsOn(Max)@IdVgs: 7.9mOhm @ 20A, 10VVgs(th)(Max)@Id: 4V @ 250µAGateCharge(Qg)(Max)@Vgs: 71 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 3740 pF @ 75 VFETFeature: -PowerDissipation(Max): 6.25W (Ta), 104W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SIR570DP-T1-RE3 | Vishay | NHE Electronics
SIR570DP-T1-RE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.