Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIR5802DP-T1-RE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, N-CHANNEL 80 V (D-S) MOSFET POWE
Product Attributes：
Part Number: SIR5802DP-T1-RE3
Manufacturer: Vishay
Description: N-CHANNEL 80 V (D-S) MOSFET POWE
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIR5802DP-T1-RE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 36VWM 58.1VC DO215AA
TVS DIODE 36VWM 61VC DO219AB
DIODE ARRAY SCHOTTKY 100V TO263
FIXED IND 4.7UH 230MA 1.2 OHM TH
MOSFET N-CH 500V 47A SUPER247
DIODE ARRAY SCHOTTKY 30V DPAK
Product Specifications：
MfrPart.: SIR5802DP-T1-RE3Mfr: Vishay SiliconixDescription: N-CHANNEL 80 V (D-S) MOSFET POWEProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen VPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 80 VCurrent-ContinuousDrain(Id)@25°C: 33.6A (Ta), 137.5A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 7.5V, 10VRdsOn(Max)@IdVgs: 2.9mOhm @ 20A, 10VVgs(th)(Max)@Id: 4V @ 250µAGateCharge(Qg)(Max)@Vgs: 60 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 3020 pF @ 40 VFETFeature: -PowerDissipation(Max): 6.25W (Ta), 104W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SIR5802DP-T1-RE3 | Vishay | NHE Electronics
SIR5802DP-T1-RE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
