Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIR638DP-T1-RE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 40V 100A PPAK SO-8
Product Attributes:
Part Number: SIR638DP-T1-RE3
Manufacturer: Vishay
Description: MOSFET N-CH 40V 100A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIR638DP-T1-RE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE ZENER 3.6V 300MW SOT23-3
TVS DIODE 17VWM 27.6VC DO204AC
DIODE GEN PURP 200V 4A DO201AD
TVS DIODE 33.3VWM 53.9VC TO277A
SFERNICE POTENTIOMETERS & TRIMME
DIODE ZENER 5.6V 225MW SOT23-3
Product Specifications:
MfrPart.: SIR638DP-T1-RE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 40V 100A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 40 VCurrent-ContinuousDrain(Id)@25°C: 100A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 0.88mOhm @ 20A, 10VVgs(th)(Max)@Id: 2.3V @ 250µAGateCharge(Qg)(Max)@Vgs: 204 nC @ 10 VVgs(Max): +20V, -16VInputCapacitance(Ciss)(Max)@Vds: 10500 pF @ 20 VFETFeature: -PowerDissipation(Max): 104W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SIR638DP-T1-RE3 | Vishay | NHE Electronics
SIR638DP-T1-RE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.