Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIRA16DP-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 16A PPAK SO-8
Product Attributes:
Part Number: SIRA16DP-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 30V 16A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIRA16DP-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE SCHOTTKY 60V 3A DO214AB
DIODE ARRAY SCHOTTKY 80V TO262
OPTOISO 5.3KV TRANS W/BASE 6DIP
MOSFET P-CH 20V 670MA SC70-3
OPTOISO 5KV TRANS W/BASE 6DIP
Product Specifications:
MfrPart.: SIRA16DP-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 30V 16A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 16A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 6.8mOhm @ 15A, 10VVgs(th)(Max)@Id: 2.3V @ 250µAGateCharge(Qg)(Max)@Vgs: 47 nC @ 10 VVgs(Max): +20V, -16VInputCapacitance(Ciss)(Max)@Vds: 2060 pF @ 15 VFETFeature: -PowerDissipation(Max): -OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SIRA16DP-T1-GE3 | Vishay | NHE Electronics
SIRA16DP-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.