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SIRA20DP-T1-RE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 25V 81.7A/100A PPAK
Product Attributes：
Part Number: SIRA20DP-T1-RE3
Manufacturer: Vishay
Description: MOSFET N-CH 25V 81.7A/100A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIRA20DP-T1-RE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SIRA20DP-T1-RE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 25V 81.7A/100A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 25 VCurrent-ContinuousDrain(Id)@25°C: 81.7A (Ta), 100A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 0.58mOhm @ 20A, 10VVgs(th)(Max)@Id: 2.1V @ 250µAGateCharge(Qg)(Max)@Vgs: 200 nC @ 10 VVgs(Max): +16V, -12VInputCapacitance(Ciss)(Max)@Vds: 10850 pF @ 10 VFETFeature: -PowerDissipation(Max): 6.25W (Ta), 104W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SIRA20DP-T1-RE3 | Vishay | NHE Electronics
SIRA20DP-T1-RE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
