Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIRA60DP-T1-RE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 100A PPAK SO-8
Product Attributes：
Part Number: SIRA60DP-T1-RE3
Manufacturer: Vishay
Description: MOSFET N-CH 30V 100A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIRA60DP-T1-RE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE ZENER 11V 500MW SOD80
OPTOISO 5.3KV 2CH OPEN DRN 8SMD
TVS DIODE 12VWM 26VC SOT23
TVS DIODE 20VWM 35.8VC DO214AA
VARISTOR 360V 1.2KA DISC 9MM
SFERNICE POTENTIOMETERS & TRIMME
Product Specifications：
MfrPart.: SIRA60DP-T1-RE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 30V 100A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 100A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 0.94mOhm @ 20A, 10VVgs(th)(Max)@Id: 2.2V @ 250µAGateCharge(Qg)(Max)@Vgs: 125 nC @ 10 VVgs(Max): +20V, -16VInputCapacitance(Ciss)(Max)@Vds: 7650 pF @ 15 VFETFeature: -PowerDissipation(Max): 57W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SIRA60DP-T1-RE3 | Vishay | NHE Electronics
SIRA60DP-T1-RE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
