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SIS176LDN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, N-CHANNEL 70 V (D-S) MOSFET POWE
Product Attributes：
Part Number: SIS176LDN-T1-GE3
Manufacturer: Vishay
Description: N-CHANNEL 70 V (D-S) MOSFET POWE
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIS176LDN-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SIS176LDN-T1-GE3Mfr: Vishay SiliconixDescription: N-CHANNEL 70 V (D-S) MOSFET POWEProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 70 VCurrent-ContinuousDrain(Id)@25°C: 12.9A (Ta), 42.3A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 3.3V, 4.5VRdsOn(Max)@IdVgs: 10.9mOhm @ 10A, 4.5VVgs(th)(Max)@Id: 1.6V @ 250µAGateCharge(Qg)(Max)@Vgs: 19 nC @ 4.5 VVgs(Max): ±12VInputCapacitance(Ciss)(Max)@Vds: 1660 pF @ 35 VFETFeature: -PowerDissipation(Max): 3.6W (Ta), 39W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SIS176LDN-T1-GE3 | Vishay | NHE Electronics
SIS176LDN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
