Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIS406DN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 9A PPAK1212-8
Product Attributes：
Part Number: SIS406DN-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 30V 9A PPAK1212-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIS406DN-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 45VWM 72.7VC DO214AB
TVS DIODE 12VWM 19.9VC DO214AC
FIXED IND 120UH 124MA 5.2 OHM TH
DIODE GEN PURP 300V 500MA DO213
TRIMMER 5K OHM 0.5W PC PIN SIDE
Product Specifications：
MfrPart.: SIS406DN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 30V 9A PPAK1212-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 9A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 11mOhm @ 12A, 10VVgs(th)(Max)@Id: 3V @ 250µAGateCharge(Qg)(Max)@Vgs: 28 nC @ 10 VVgs(Max): ±25VInputCapacitance(Ciss)(Max)@Vds: 1100 pF @ 15 VFETFeature: -PowerDissipation(Max): 1.5W (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SIS406DN-T1-GE3 | Vishay | NHE Electronics
SIS406DN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
