Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIS698DN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 6.9A PPAK1212-8
Product Attributes:
Part Number: SIS698DN-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 100V 6.9A PPAK1212-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIS698DN-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE ZENER 2.7V 300MW SOT23-3
DIODE SCHOTTKY 50V 16A TO263AB
TVS DIODE 36VWM 58.1VC DO214AC
FIXED IND 5.6UH 7A 24 MOHM SMD
DIODE ARRAY SCHOTTKY 170V TO3PW
Product Specifications:
MfrPart.: SIS698DN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 100V 6.9A PPAK1212-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: -PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 6.9A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10VRdsOn(Max)@IdVgs: 195mOhm @ 2.5A, 10VVgs(th)(Max)@Id: 3.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 8 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 210 pF @ 50 VFETFeature: -PowerDissipation(Max): 19.8W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SIS698DN-T1-GE3 | Vishay | NHE Electronics
SIS698DN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.