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SISH112DN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 11.3A PPAK
Product Attributes：
Part Number: SISH112DN-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 30V 11.3A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SISH112DN-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SISH112DN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 30V 11.3A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 11.3A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 7.5mOhm @ 17.8A, 10VVgs(th)(Max)@Id: 1.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 27 nC @ 4.5 VVgs(Max): ±12VInputCapacitance(Ciss)(Max)@Vds: 2610 pF @ 15 VFETFeature: -PowerDissipation(Max): 1.5W (Tc)OperatingTemperature: -50°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SHSISH112DN-T1-GE3 | Vishay | NHE Electronics
SISH112DN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
