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SISH536DN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, N-CHANNEL 30 V (D-S) MOSFET POWE
Product Attributes：
Part Number: SISH536DN-T1-GE3
Manufacturer: Vishay
Description: N-CHANNEL 30 V (D-S) MOSFET POWE
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SISH536DN-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SISH536DN-T1-GE3Mfr: Vishay SiliconixDescription: N-CHANNEL 30 V (D-S) MOSFET POWEProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen VPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 24.7A (Ta), 67.4A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 3.25mOhm @ 10A, 10VVgs(th)(Max)@Id: 2.2V @ 250µAGateCharge(Qg)(Max)@Vgs: 25 nC @ 10 VVgs(Max): +16V, -12VInputCapacitance(Ciss)(Max)@Vds: 1150 pF @ 15 VFETFeature: -PowerDissipation(Max): 3.57W (Ta), 26.5W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SHSISH536DN-T1-GE3 | Vishay | NHE Electronics
SISH536DN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
