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    SISH892BDN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, N-CHANNEL 100 V (D-S) MOSFET POW
    SISH892BDN-T1-GE3 Images
    SISH892BDN-T1-GE3 Images
    Product Attributes：
  • Part Number: SISH892BDN-T1-GE3
  • Manufacturer: Vishay
  • Description: N-CHANNEL 100 V (D-S) MOSFET POW
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • SISH892BDN-T1-GE3 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: SISH892BDN-T1-GE3
  • Mfr: Vishay Siliconix
  • Description: N-CHANNEL 100 V (D-S) MOSFET POW
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: TrenchFET® Gen IV
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 100 V
  • Current-ContinuousDrain(Id)@25°C: 6.8A (Ta), 20A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10V
  • RdsOn(Max)@IdVgs: 30.4mOhm @ 10A, 10V
  • Vgs(th)(Max)@Id: 2.4V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 26.5 nC @ 10 V
  • Vgs(Max): ±20V
  • InputCapacitance(Ciss)(Max)@Vds: 1110 pF @ 50 V
  • FETFeature: -
  • PowerDissipation(Max): 3.4W (Ta), 29W (Tc)
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: PowerPAK® SO-8DC
  • SISH892BDN-T1-GE3 | Vishay | NHE Electronics
    • SISH892BDN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
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