Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SISS05DN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 30V 29.4A/108A PPAK
Product Attributes：
Part Number: SISS05DN-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 30V 29.4A/108A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SISS05DN-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 25.6VWM 41.5VC DO204AL
TVS DIODE 6VWM 10.3VC DO214AA
POT 1K OHM 1W PLASTIC LINEAR
FUSE BOARD MOUNT 3A 32VDC 0805
POT CONDUCTIVE PLASTIC ELEMENT
Product Specifications：
MfrPart.: SISS05DN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 30V 29.4A/108A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 29.4A (Ta), 108A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 3.5mOhm @ 10A, 10VVgs(th)(Max)@Id: 2.2V @ 250µAGateCharge(Qg)(Max)@Vgs: 115 nC @ 10 VVgs(Max): +16V, -20VInputCapacitance(Ciss)(Max)@Vds: 4930 pF @ 15 VFETFeature: -PowerDissipation(Max): 5W (Ta), 65.7W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SSISS05DN-T1-GE3 | Vishay | NHE Electronics
SISS05DN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
