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SISS06DN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 47.6/172.6A PPAK
Product Attributes：
Part Number: SISS06DN-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 30V 47.6/172.6A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SISS06DN-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SISS06DN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 30V 47.6/172.6A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 47.6A (Ta), 172.6A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 1.38mOhm @ 15A, 10VVgs(th)(Max)@Id: 2.2V @ 250µAGateCharge(Qg)(Max)@Vgs: 77 nC @ 10 VVgs(Max): +20V, -16VInputCapacitance(Ciss)(Max)@Vds: 3660 pF @ 15 VFETFeature: -PowerDissipation(Max): 5W (Ta), 65.7W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SSISS06DN-T1-GE3 | Vishay | NHE Electronics
SISS06DN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
