Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SISS27DN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 30V 50A PPAK 1212-8S
Product Attributes：
Part Number: SISS27DN-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 30V 50A PPAK 1212-8S
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SISS27DN-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE AVALANCHE 1KV 2.4A TO277
FIXED IND 22UH 545MA 1.12 OHM TH
MOSFET P-CH 20V 15.4A 8SOIC
DIODE ARRAY SCHOTTKY 60V DPAK
POT CONDUCTIVE PLASTIC ELEMENT
Product Specifications：
MfrPart.: SISS27DN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 30V 50A PPAK 1212-8SProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 50A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 5.6mOhm @ 15A, 10VVgs(th)(Max)@Id: 2.2V @ 250µAGateCharge(Qg)(Max)@Vgs: 140 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 5250 pF @ 15 VFETFeature: -PowerDissipation(Max): 4.8W (Ta), 57W (Tc)OperatingTemperature: -50°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SSISS27DN-T1-GE3 | Vishay | NHE Electronics
SISS27DN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
