Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SISS32LDN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 80V 17.4A/63A PPAK
Product Attributes：
Part Number: SISS32LDN-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 80V 17.4A/63A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SISS32LDN-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
SFERNICE POTENTIOMETERS & TRIMME
TVS DIODE 51VWM 82.4VC DO214AB
DIODE MODULE 600V 126A TO244AB
TVS DIODE 22VWM 39.4VC DO214AC
DIODE SCHOTTKY 80V 10A D2PAK
FIXED IND 110UH 128MA 4.9 OHM TH
Product Specifications：
MfrPart.: SISS32LDN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 80V 17.4A/63A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 80 VCurrent-ContinuousDrain(Id)@25°C: 17.4A (Ta), 63A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 7.2mOhm @ 15A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 57 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2550 pF @ 40 VFETFeature: -PowerDissipation(Max): 5W (Ta), 65.7W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 1212-8SHSISS32LDN-T1-GE3 | Vishay | NHE Electronics
SISS32LDN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
