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SIZF906BDT-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays, DUAL N-CHANNEL 30 V (D-S) MOSFET
Product Attributes：
Part Number: SIZF906BDT-T1-GE3
Manufacturer: Vishay
Description: DUAL N-CHANNEL 30 V (D-S) MOSFET
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
SIZF906BDT-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SIZF906BDT-T1-GE3Mfr: Vishay SiliconixDescription: DUAL N-CHANNEL 30 V (D-S) MOSFETProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - ArraysPackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: 2 N-Channel (Dual), SchottkyFETFeature: StandardDraintoSourceVoltage(Vdss): 30VCurrent-ContinuousDrain(Id)@25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)RdsOn(Max)@IdVgs: 2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10VVgs(th)(Max)@Id: 2.2V @ 250µAGateCharge(Qg)(Max)@Vgs: 49nC @ 10V, 165nC @ 10VInputCapacitance(Ciss)(Max)@Vds: 1630pF @ 15V, 5550pF @ 15VPower-Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountPackage/Case: 8-PowerWDFNSIZF906BDT-T1-GE3 | Vishay | NHE Electronics
SIZF906BDT-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
