Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SQD50N10-8M9L_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 50A TO252AA
Product Attributes：
Part Number: SQD50N10-8M9L_GE3
Manufacturer: Vishay
Description: MOSFET N-CH 100V 50A TO252AA
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQD50N10-8M9L_GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE GP 400V 150A POWERTAB
DIODE GEN PURP 1KV 150A DO205
DIODE SCHOTTKY 30V 5A DO201AD
DIODE ZENER 9.1V 1.85W SOD64
FIXED IND 2.7UH 378MA 490MOHM SM
DIODE ARRAY SCHOTTKY 100V D618SL
Product Specifications：
MfrPart.: SQD50N10-8M9L_GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 100V 50A TO252AAProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 50A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 8.9mOhm @ 15A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 70 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2950 pF @ 25 VFETFeature: -PowerDissipation(Max): 136W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: TO-252AASQD50N10-8M9L_GE3 | Vishay | NHE Electronics
SQD50N10-8M9L_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
