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SQJ211ELP-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 100V 33.6A PPAK SO-8
Product Attributes：
Part Number: SQJ211ELP-T1_GE3
Manufacturer: Vishay
Description: MOSFET P-CH 100V 33.6A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQJ211ELP-T1_GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SQJ211ELP-T1_GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 100V 33.6A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: -PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 33.6A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): -RdsOn(Max)@IdVgs: 30mOhm @ 8A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 68 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 3800 pF @ 25 VFETFeature: -PowerDissipation(Max): 68W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8 DualSQJ211ELP-T1_GE3 | Vishay | NHE Electronics
SQJ211ELP-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
