Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SQJ412EP-T1_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 40V 32A PPAK SO-8
Product Attributes：
Part Number: SQJ412EP-T1_GE3
Manufacturer: Vishay
Description: MOSFET N-CH 40V 32A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQJ412EP-T1_GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TRIMMER 50 OHM 0.5W WIRE LEADS
TVS DIODE 6.4VWM 11.3VC SMC
DIODE ZENER 130V 1.25W DO214AC
TVS DIODE 10VWM 18.8VC DO214AA
TVS DIODE 41.3VWM 73.5VC DO204AL
IC ANALOG SWITCH CMOS 8SOIC
Product Specifications：
MfrPart.: SQJ412EP-T1_GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 40V 32A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: Automotive, AEC-Q101, TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 40 VCurrent-ContinuousDrain(Id)@25°C: 32A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 4.1mOhm @ 10.3A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 120 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 5950 pF @ 20 VFETFeature: -PowerDissipation(Max): 83W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SQJ412EP-T1_GE3 | Vishay | NHE Electronics
SQJ412EP-T1_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
