Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SQJ418EP-T2_GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 48A PPAK SO-8
Product Attributes:
Part Number: SQJ418EP-T2_GE3
Manufacturer: Vishay
Description: MOSFET N-CH 100V 48A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SQJ418EP-T2_GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
IC ANALOG SWITCH SPDT 28PLCC
TVS DIODE 30VWM 48.4VC DO214AC
BRIDGE RECT 1P 600V 3.5A BU
SFERNICE POTENTIOMETERS & TRIMME
DIODE GEN PURP 600V 70A DO203AB
SFERNICE POTENTIOMETERS & TRIMME
Product Specifications:
MfrPart.: SQJ418EP-T2_GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 100V 48A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 48A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 14mOhm @ 10A, 10VVgs(th)(Max)@Id: 3.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 35 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 1700 pF @ 25 VFETFeature: -PowerDissipation(Max): 68W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8 DualSQJ418EP-T2_GE3 | Vishay | NHE Electronics
SQJ418EP-T2_GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.